For decades, mathematicians have struggled to understand matrices that reflect both order and randomness, like those that model semiconductors.
A new method could change that.
Recent research has made a significant mathematical advance in understanding Anderson localization, the phenomenon where disorder in a material (like impurities in silicon) can stop electron flow. Researchers proved that, for a simplified model called band matrices, electrons do become trapped ("localized") with enough disorder. This breakthrough, achieved by Yan Yau and Jun Yin’s team, uses a new mathematical technique and brings us closer to fully understanding Anderson’s original model and designing materials with specific electronic properties. It’s a key step in understanding systems between order and randomness.
A new method could change that.
Recent research has made a significant mathematical advance in understanding Anderson localization, the phenomenon where disorder in a material (like impurities in silicon) can stop electron flow. Researchers proved that, for a simplified model called band matrices, electrons do become trapped ("localized") with enough disorder. This breakthrough, achieved by Yan Yau and Jun Yin’s team, uses a new mathematical technique and brings us closer to fully understanding Anderson’s original model and designing materials with specific electronic properties. It’s a key step in understanding systems between order and randomness.
