For decades, mathematicians have struggled to understand matrices that reflect both order and randomness, like those that model semiconductors.
A new method could change that.
Recent research has made a significant mathematical advance in understanding Anderson localization, the phenomenon where disorder in a material (like impurities in silicon) can stop electron flow. Researchers proved that, for a simplified model called band matrices, electrons do become trapped ("localized") with enough disorder. This breakthrough, achieved by Yan Yau and Jun Yin’s team, uses a new mathematical technique and brings us closer to fully understanding Anderson’s original model and designing materials with specific electronic properties. It’s a key step in understanding systems between order and randomness.
A new method could change that.
Recent research has made a significant mathematical advance in understanding Anderson localization, the phenomenon where disorder in a material (like impurities in silicon) can stop electron flow. Researchers proved that, for a simplified model called band matrices, electrons do become trapped ("localized") with enough disorder. This breakthrough, achieved by Yan Yau and Jun Yin’s team, uses a new mathematical technique and brings us closer to fully understanding Anderson’s original model and designing materials with specific electronic properties. It’s a key step in understanding systems between order and randomness.
The second law of thermodynamics is among the most sacred in all of science, but it has always rested on 19th century arguments about probability. New arguments trace its true source to the flows of quantum information.
analogue I-K of the Laplacian in potential theory
